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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts APPLICATION * High current gain applications. CHBTA13PT CURRENT 1.2 Ampere FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=1200mA). * Suitable for high packing density. * Low voltage (Max.=30V) . * High saturation current and current gain capability. .110 (2.80) .082 (2.10) .119 (3.04) SOT-23 .041 (1.05) .033 (0.85) (1) .066 (1.70) (3) CONSTRUCTION * NPN Darlington Transistor (2) MARKING * NI .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) E (2) .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board, 1.6"X1.6"X0.06". 2003-5 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation derate above 25 OC storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 - MIN. MAX. 30 30 10 1200 1500 0.5 350 2.8 +150 +150 +150 V V V UNIT mA mA mA mW mW/OC C C C -55 - -55 RATING CHARACTERISTIC CURVES ( CHBTA13PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board, 1.6"X1.6"X0.06". PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VCE = 10 V VCE = 5.0 V; note 1 IC = 10 mA IC = 100 mA VCEsat VBEsat Ccb fT Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector-base capacitance transition frequency IC = 100 mA; I B =0.1mA IC = 100 mA; VCE = 5.0 V IE = ie = 0; VCB =10V; f = 1 MHz IC = 10 mA; VCE =10 V ; f = 100 MHz 5000 10000 - - - 125 - - 1.50 2.0 10 - V V pF MHz - - MIN. MAX. 0.1 0.1 UNIT uA uA |
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